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| 3.2x1.6mm SMD CHIP LED LAMP APTD3216SURC HYPER RED Features z3.2mmx1.6mm zLOW zWIDE Description SMT LED,1.8mm THICKNESS. The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. : 2000PCS / REEL. zIDEAL zRoHS zPACKAGE COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAB9994 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/16/2005 DRAWN: S.H.CHEN PAGE: 1 OF 4 ERP: 1203002299 Selection Guide Part No. Dice Lens Type Iv (mcd) @ 20mA Min. APTD3216SURC HYPER RED (InGaAlP) WATER CLEAR 280 Typ. 600 Viewing Angle 2 1/2 50 Note: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. Electrical / Optical Characteristics at TA=25C Symbol peak D 1/2 C VF IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device Hyper Red Hyper Red Hyper Red Hyper Red Hyper Red Hyper Red Typ. 640 628 27 45 1.9 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR = 5V Absolute Maximum Ratings at TA=25C Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating / Storage Temperature Note: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. Hyper Red 170 30 185 5 -40C To +85C Units mW mA mA V SPEC NO: DSAB9994 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/16/2005 DRAWN: S.H.CHEN PAGE: 2 OF 4 ERP: 1203002299 Hyper Red APTD3216SURC SPEC NO: DSAB9994 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/16/2005 DRAWN: S.H.CHEN PAGE: 3 OF 4 ERP: 1203002299 APTD3216SURC Recommended Soldering Pattern (Units : mm) Tape Specifications (Units : mm) If special sorting is required (e.g. binning based on forward voltage, luminous intensity, or wavelength), the typical accuracy of the sorting process is as follows: 1. Wavelength: +/-1nm 2. Luminous Intensity: +/-15% 3. Forward Voltage: +/-0.1V Note: Accuracy may depend on the sorting parameters. SPEC NO: DSAB9994 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/16/2005 DRAWN: S.H.CHEN PAGE: 4 OF 4 ERP: 1203002299 |
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